The global market for high-k and ALD/CVD metal precursors was rated at $501 million in 2020 at $754.58 million by 2027, at a CAGR of 7.1% from 2021 to 2027. The global high-k metal precursor and ALD/CVD market is poised to witness high growth during the forecast period owing to complex processes . The vapor precursor segment is expected to overtake all other segments of the semiconductor materials industry. Precursors that cross multiple applications, such as germanium (Ge), tantalum (Ta), etc., are expected to be needed in multiple generations. The downscaling trend of organometallic semiconductors is expected to reduce power consumption and cost per function in a chip.
Chemical Vapor Deposition (CVD) is mainly used to deposit various thin films of amorphous or crystalline metal, oxides, carbides, nitrides, intermetallic compounds and inorganic polymer. In the semiconductor industry, the CVD process is mainly used to create various layers such as electrode (capacitor or gate), intermetallic dielectric (IMD), interlayer dielectric (ILD). Metal oxide CVD precursors generally fall into three categories: inorganic, organometallic, and organometallic compounds. Organometallic species are mainly used as precursors to form thin films of metal oxides, metal nitrides and other types of metal compounds. Common organometallic precursors such as group IV and group V elements, hafnium, tantalum, niobium, zirconium, etc., are considered for precursor development activities. Several mixed oxide phases, such as hafnium oxide and zirconium oxide, are used as high-permittivity gate materials in microelectronic devices.
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CVD/ALD processes allow the growth of thin films of high conformance and uniformity with precise thickness control. Various CVD applications include corrosion resistant protective coatings, fabrication temperature and formation of ceramic composites, dense optical fibers and new powder materials. Typical CVD precursors include metal halides and hydrides. However, various organometallic compounds are currently in use, including metal alkoxides, carbonyls, amidinates, diketones, and metal alkyls. High-k precursors are mainly used for gate and capacitors, and metallic precursors are used for electrode and interconnect layers. ALD is being investigated as a potential technique for depositing high-k memory capacitor dielectrics, high-k gate oxides, metals, ferroelectrics, and nitrides for electrodes and interconnects.
Global High-K and ALD/CVD Metal Precursor Market Dynamics
Drivers: increasing demand in nanotechnology applications
The market for high-k metal precursors is expected to be driven by nanotechnology, which has the potential for a wide range of applications in next-generation products, including display technology, lighting and l biological imaging. Due to military and industrial applications, governments have invested billions of dollars in nanotechnology research. The United States has invested $3.7 billion, Japan $750 million and the European Union $1.2 billion in the National Nanotechnology Initiative. The optical, mechanical, dielectric, chemical and conductive properties of organic-inorganic hybrid films are expected to influence the high-k metal precursor market.
The Royal Society report calls for strict regulation of nanotechnology for the human health and safety risks of nanotechnology. Davies (2008) proposed a regulatory roadmap outlining the steps for incorporating high-k dielectrics in nanotechnology applications. Nanoscale materials such as nanopillars are used in solar cells and nanofibers, which are used in airplane wings. Improvements in novel materials and methodologies for nanotechnology devices are expected to gradually contribute to the development of high-k metal precursors using integrated nanometal-organic concepts.
Constraints: high risk of impurity levels
The challenge in the high-k metal precursor market over the next few years would be the determination of organic-inorganic hybrid films that can be grown easily. The main limitation of high-k instruments is their low rate of thin film formation. Thick atomic layers are not required because ALD is used to generate substrates used in nanotechnology and microelectronics. Some of the substrates may not be used due to impurity or brittleness. Self-limiting surface reactions coupled with saturated processes in high-k ALD reactions are believed to limit the growth of high-k metal precursors.
SAFC Hitech has invested nearly $57 billion in research and development in the high-k metal precursor market. Ultrapure organic metal compounds are essential for many microelectronics and optoelectronics applications with a purity of 99.9999% or higher. These ultra-pure organometallic sources require special manufacturing routes to keep impurity levels below parts per billion (ppb). All materials in the high-k metal precursor system, such as dopants, MO precursors, ammonia, and hydrogen carrier gas, must be supplied in high purity. SSL product developers can implement high-k precursors by embedding or purchasing modular drivers or working with discrete components to make custom drivers. This allows the deposition of materials in thin layers at low temperatures. The selection and design of appropriate organometallic precursors is crucial for the successful development of new ALD processes.
The study categorizes the high-k metal precursor and ALD/CVD market based on technology, application, and regions.
By Technology (Revenue, USD Million, 2017-2027)
By Application (Revenue, USD Million, 2017-2027)
By Region (Revenue, USD Million, 2017-2027)
- North America (United States, Canada, Mexico)
- South America (Brazil, Argentina, Colombia, Peru, Rest of Latin America)
- Europe (Germany, Italy, France, UK, Spain, Poland, Russia, Slovenia, Slovakia, Hungary, Czech Republic, Belgium, Netherlands, Norway, Sweden, Denmark, Rest of Europe)
- Asia-Pacific (China, Japan, India, South Korea, Indonesia, Malaysia, Thailand, Vietnam, Myanmar, Cambodia, Philippines, Singapore, Australia and New Zealand, Rest of Asia-Pacific)
- The Middle East and Africa (Saudi Arabia, United Arab Emirates, South Africa, North Africa, Rest of MEA)
Semiconductors, by application, are estimated to be the fastest growing segment during the forecast period
Based on application, the global high-k and ALD/CVD metal precursor market has been segmented into semiconductor and non-semiconductor. Semiconductor is the fastest growing segment during the forecast period.
Significant development in the field of CVD/ALD processes, growing demand for advanced semiconductor materials, and application of high-k precursors to non-semiconductor domains are the major growth strategies in the ALD metal precursor market. /CVD at high k. The regulatory policies and initiatives undertaken by the government to manufacture semiconductor devices are expected to have a positive impact on the growth of the market. Market players are focusing on optical, dielectric and chemical properties of organic-inorganic hybrid films to reduce manufacturing costs. Semiconductor manufacturers are implementing HkMG stacks in metal-oxide semiconductor field-effect transistors (MOSFETs) used in digital CMOS technology to continue scaling devices at 45 nm and below nodes . The latest technology introduced by Intel includes improved channel strain, a high-k hafnium-based electric gate, and a dual-work function metal replacement gate.
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Asia-Pacific accounts for the highest CAGR over the forecast period in the market for high-k metal precursors and ALD/CVD
Based on region, the global market for high-k metal precursors and ALD/CVD has been segmented into North America, Europe, Asia-Pacific, South America, and Middle East & Africa. Asia-Pacific posted a growth rate of 19.3%. The Asia-Pacific High-k and ALD/CVD Metal Precursors Market is analyzed across Japan, China, India, Australia and Rest of Asia-Pacific.
The growth of semiconductor manufacturing in China is believed to be a key driver for regional market expansion, potentially representing the next wave of regional industry expansion. Industry players have major concerns about the impact of state-sponsored industrial policy and private and public capital resources. Due to its advanced packaging base and large foundry of LED chip manufacturers, Taiwan is expected to have the largest consumer base of semiconductor materials. Some of the industry challenges in the APAC region include the economic cycle, which can negatively influence the demand for metal precursors.
Main market players
The global market for high-k metal precursors and ALD/CVD is fragmented into few major players and other local, small and medium manufacturers. Some of the players are Air Liquide, Dow Chemicals, Air Products and Chemicals Inc., Merck Group, Nanmat Technology Co. Ltd., Praxair Technology Inc., Samsung Electronics Co. Ltd., Tri Chemical Laboratories Inc., TSI Incorporated, and JSR Corp. ; these players garnered the maximum market share in 2020. These market players are adopting growth strategies and strengthening their position in the market. Product launches and partnerships are the major growth strategies adopted by the various key market players.
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